Precision Photometric Determination of Low Capacitance Silicon Photodiode in UV to NIR Bands YJJ S1336-8BQ TO-5 Package

Product Description:

S1336-8BQ Is Suitable For Precision Photometric Determination Of Silicon Photodiode Low Capacitance In Ultraviolet To Near-Infrared Bands

Features:

Suitable for precise photometry in ultraviolet to near-infrared bands

peculiarity

- High sensitivity in UV band

- Low capacitance

- High reliability

Receiving surface 5.8× 5.8mm

Encapsulation metal

Package category TO-8

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.1μs

Junction capacitance (typical) 20 pF

Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz

Specifications:

Low Capacitance Silicon Photodiode

NIR Bands Silicon Photodiode

UV Bands Silicon Photodiode

Precision Photometric Determination of Low Capacitance Silicon Photodiode in UV to NIR Bands YJJ S1336-8BQ TO-5 Package Images